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2016•ACS NanoRequires access

Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe 2 /MoS 2 van der Waals Heterostructures

Kenan Zhang, Tianning Zhang, Guanghui Cheng, Tianxin Li, Shuxia Wang, Wei Wei, Xiaohao Zhou, Weiwei Yu, Yan Sun, Peng Wang, Dong Zhang, Changgan Zeng, Xingjun Wang, Weida Hu, Hong Jin Fan, Guozhen Shen, Xin Chen, Xiangfeng Duan, Kai Chang, Ning Dai

Open publisher page 567 citations

Abstract

We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

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What this paper is about

We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

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Available abstract

We demonstrate the type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures and an interlayer optical transition at ∼1.55 μm. The photoinduced charge separation between the MoTe2/MoS2 vdW heterostructure is verified by Kelvin probe force microscopy (KPFM) under illumination, density function theory (DFT) simulations and photoluminescence (PL) spectroscopy. Photoelectrical measurements of MoTe2/MoS2 vdW heterostructures show a distinct photocurrent response in the infrared regime (1550 nm). The creation of type-II vdW heterostructures with strong interlayer coupling could improve our fundamental understanding of the essential physics behind vdW heterostructures and help the design of next-generation infrared optoelectronics.

Key concepts: Heterojunction, van der Waals force, Photocurrent, Kelvin probe force microscope, Photodetection, Materials science, Infrared, Photoluminescence

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Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe 2 /MoS 2 van der Waals Heterostructures — Research Paper | ScholarLens