Effect of Phosphorus Gettering on Electrical Properties of N-Type Multicrystalline Ingots Grown by Different Thermal Profiles

This paper presents the effect of phosphorus gettering on electrical properties of n-type multicrystalline silicon ingots grown by different solidification processes, A and B. Effective carrier lifetimes of the n-type mc-Si wafers cut from the both ingots increased after phosphorus diffusion at 875 oC. Furthermore, the ingot grown by method B has a better response to P-gettering than the ingot grown by method A especially at the top regions. In addition, effective carrier lifetimes increased after P-diffusion at all parts of the ingot grown by method B, especially near the top and the bottom of the ingot.