원자층 증착법을 이용한 루테늄 나노크리스탈의 증착과 전기적 특성 측정
오흥룡, 정회성, 강상원
Abstract
오흥룡, 정회성, 강상원
Abstract
Ruthenium nanocrystals were grown by PEALD using Ru(EtCp)₂ as precursor for nonvolatile memory applications. Maximum nanocrystal density of 2.5*10¹²㎝?², diameter of 2~4㎚ can be obtained. Charging characteristics of Ru nanocrystal structure has been investigated by capacitance-voltage (C-V) curve analysis. Also retention characteristics of nanocrystal memory structure have been studied. Judging from these results, Ru nanocrystal memory can be used as next-generation nonvolatile memory.
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Ruthenium nanocrystals were grown by PEALD using Ru(EtCp)₂ as precursor for nonvolatile memory applications. Maximum nanocrystal density of 2.5*10¹²㎝?², diameter of 2~4㎚ can be obtained. Charging characteristics of Ru nanocrystal structure has been investigated by capacitance-voltage (C-V) curve analysis. Also retention characteristics of nanocrystal memory structure have been studied. Judging from these results, Ru nanocrystal memory can be used as next-generation nonvolatile memory.
Key concepts: Nanocrystal, Non-volatile memory, Materials science, Capacitance, Nanotechnology, Optoelectronics, Chemistry, Physical chemistry