1999•Unpublished venueRequires access

Photorefractive properties of InGaAs/GaAs multiple quantum well structure

Satoshi Iwamoto, Hiroyuki Kageshima, Takashi Yuasa, M. Nishioka, T. Someya, Yasuhiko Arakawa, Katsuyuki Fukutani, Tsutomu Shimura, K. Kuroda

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Abstract

We fabricate semi-insulating lnGaAs/GaAs multiple quantum wells and measure the two-wave mixing gain and the four-wave mixing diffraction efficiency at the wavelengths around the excitonic resonance of 0.93 µm. The important properties including spatial resolution, saturation intensity and response time are experimentally investigated. The photorefractive response time of 100 µs is obtained at the wavelength of 924.5 nm with the intensity of 7 mW /cm2.

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Key concepts: Photorefractive effect, Wavelength, Quantum well, Materials science, Diffraction, Optoelectronics, Gallium arsenide, Saturation (graph theory)