Growth of Microcrystalline Silicon Thin Film Using 40.68 MHz PECVD System for Solar Cell Application

In this study, microcrystalline silicon thin films have been prepared through a mixture of silane and hydrogen gases using an excitation frequency of 40.68 MHz. For more cost reduction of solar cells, higher module efficiencies and deposition rates are required. The microstructures of μc-Si intrinsic layer might be affected by the deposition parameters, such as power densities, substrate temperatures, the ratios of gas flow rates and deposition pressures. By adjusting these deposition parameters, various electric and structures properties were investigated. The optimum deposition condition was also performed for the application of silicon thin film solar cells.