1975•OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)Requires access
Preparation of niobium nitride and niobium carbonitride thin films by reactive sputtering
J. Spitz, A. Aubert, J.M. Blocher, H.E. Hintermann, L.H. Hall
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Abstract
The preparation of niobium nitride and carbonitride thin films by reactive sputtering either of a niobium or niobium-carbon target under partial pressure of nitrogen or nitrogen + methane has been studied. The influence of the experimental conditions on composition, structure, and electrical properties of the deposited materials are investigated in each case. The correlations observed between the nature of the deposited materials and their superconductive properties are related. 11 fig. (auth)