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High-Frequency Characteristics of AlGaAs / GaAs HBT with Carbon-doped Base

김연태, 이제희, 윤상호, 송재복, 원태영

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Key concepts: Heterojunction bipolar transistor, Optoelectronics, Doping, Materials science, Carbon fibers, Base (topology), Gallium arsenide, Electrical engineering

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High-Frequency Characteristics of AlGaAs / GaAs HBT with Carbon-doped Base — Research Paper | ScholarLens