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2011•Journal of the Korean Institute of Electrical and Electronic Material EngineersRequires access

N형 Ge-on-Si 기판에 형성된 Pd Germanide의 열안정성 및 Schottky 장벽 분석

오세경, Hi-Deok Lee, Hong-Sik Shin, Min‐Ho Kang, 복정득, 정의정, 권혁민, Ga‐Won Lee

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Abstract

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to 450℃. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569∼0.631 eV and work function of 4.699∼4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

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What this paper is about

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to 450℃. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569∼0.631 eV and work function of 4.699∼4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

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Available abstract

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to 450℃. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569∼0.631 eV and work function of 4.699∼4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

Key concepts: Germanide, Schottky barrier, Materials science, Schottky diode, Work function, Metal–semiconductor junction, Optoelectronics, Germanium

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N형 Ge-on-Si 기판에 형성된 Pd Germanide의 열안정성 및 Schottky 장벽 분석 — Research Paper | ScholarLens