Shuji Nakamura
Abstract
Recently, we succeeded in producing for the first time, 1-cd-brightness blue InGaN/AlGaN light-emitting diodes (LEDs) suitable for commercial applications.1,5 In this report, co-doping with both Zn and Si into the InGaN active layer in InGaN/AlGaN LEDs in order to increase the output power of the InGaN/AlGaN LEDs is described.
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Recently, we succeeded in producing for the first time, 1-cd-brightness blue InGaN/AlGaN light-emitting diodes (LEDs) suitable for commercial applications.1,5 In this report, co-doping with both Zn and Si into the InGaN active layer in InGaN/AlGaN LEDs in order to increase the output power of the InGaN/AlGaN LEDs is described.
Key concepts: Light-emitting diode, Optoelectronics, Materials science, Diode, Brightness, Wide-bandgap semiconductor, Doping, Active layer