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InAs/GaAs quantum dot injection lasers

Marius Grundmann, N. N. Ledenstov, F. Heinrichsdorff, M. Mao, D. Bimber, V. M. Ustinov, P. S. Kop’ev, Zh. I. Alfërov, James A. Lott

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Abstract

Semiconductor diode lasers are presented whose active medium consists of quantum dots (QDs). Laser operation is based on zero-dimensionally localized carriers. High density arrays of uniform QDs are fabricated using epitaxy in the Stranski-Krastanow growth mode. Edge emitting and vertical cavity surface emitting lasers have been fabricated with some of their properties already exceeding the performance of conventional semiconductor diode lasers based on quantum wells.

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What this paper is about

Semiconductor diode lasers are presented whose active medium consists of quantum dots (QDs). Laser operation is based on zero-dimensionally localized carriers. High density arrays of uniform QDs are fabricated using epitaxy in the Stranski-Krastanow growth mode. Edge emitting and vertical cavity surface emitting lasers have been fabricated with some of their properties already exceeding the performance of conventional semiconductor diode lasers based on quantum wells.

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Available abstract

Semiconductor diode lasers are presented whose active medium consists of quantum dots (QDs). Laser operation is based on zero-dimensionally localized carriers. High density arrays of uniform QDs are fabricated using epitaxy in the Stranski-Krastanow growth mode. Edge emitting and vertical cavity surface emitting lasers have been fabricated with some of their properties already exceeding the performance of conventional semiconductor diode lasers based on quantum wells.

Key concepts: Optoelectronics, Quantum dot laser, Quantum dot, Laser, Materials science, Semiconductor laser theory, Quantum well, Diode

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