2009•대한전자공학회 학술대회Requires access
광대역 디지털 전치 왜곡기를 이용한 고효율 GaN HEMT Doherty 전력증폭기의 선형성 개선
이문우, 이용섭, 감상호, 정윤하
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Abstract
This paper represents the wideband digital predistortion (WDPD) with the memory system to compensate the memory effects as well as nonlinearities of the GaN HEMT Doherty power amplifier. For a 2.14-㎓ 2-FA WCDMA signal with 10-㎒ carrier spacing, the adjacent channel leakage ratio at ±10-㎒ offset is below -50 ㏈c with the drain efficiency of 42.1 % after the WDPD linearization at an output power of 36 ㏈m.