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2002•AMS Acta (University of Bologna)Open access

Noise, Large-Signal Modeling and Characterization of InP/InGaAs HBTs

Neeraj Lal, S. Nuttinck, Anand Raghavan, E. Gebara, S. Venkataraman, John Papapolymerou, J. Laskar

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Abstract

We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices.

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We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices.

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Available abstract

We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and power characteristics of InP/InGaAs HBTs are measured over a wide range of frequencies and bias conditions. A minimum noise figure (FMIN) of 3.5dB, and a gain of 16.8dB are achieved at 10-GHz. These measurement results are the basis for robust nonlinear models of InP/InGaAs HBT devices.

Key concepts: Heterojunction bipolar transistor, Optoelectronics, Materials science, Gallium arsenide, SIGNAL (programming language), Noise (video), Indium gallium arsenide, Indium phosphide

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