2007•Acta Physica SinicaOpen access
The electron emission yield induced by the interaction of highly charged argon ions with silicon surface
Zhao Yong-Tao, Xiao Guo-qing, Xu Zhongfeng, A. Qayyum, Yuyu Wang, Zhang Xiao-An, Li Fu-Li, Zhan Wen-Long, (1)核科学与技术研究所,伊斯兰堡 44000,巴基斯坦; (2)西安交通大学应用物理系,西安 710049; (3)中国科学院近代物理研究所,兰州 730000; (4)中国科学院近代物理研究所,兰州 730000；西安交通大学应用物理系,西安 710049; (5)中国科学院近代物理研究所,兰州 730000；咸阳师范学院物理系,咸阳 712000
Open full text 4 citations
Abstract
The electron emission yield of the interaction of highly charged argon ions with silicon surface is reported. The experiment was done at the Atomic Physics Research Platform on the Electron Cyclotron Resonance (ECR) Ion Source of the National Laboratory HIRFL (Heavy Ion Research Facility in Lanzhou). In the experiment, the potential energy and kinetic energy was selected by varying the projectile charge states and extracting voltage, thus the contributions of the projectile potential energy deposition and electronic energy loss in the solid are extensively investigated. The results show that, the two main factors leading to surface electron emission,namely the potential energy deposition and the electronic energy loss, are both approximately proportional to the electron emission yield per ion.