2014•Chinese Physics LettersRequires access

Effects of 1.0–11.5 MeV Electron Irradiation on GaInP/GaAs/Ge Triple-junction Solar Cells for Space Applications

Rong Wang, Ming Lu, Tiancheng Yi, Kui Yang, Xiaoxia Ji

Abstract

GaInP/GaAs/Ge triple-junction solar cells are irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluence ranging up to 3 × 10 15 , 3 × 10 15 , and 3 × 10 14 cm −2 , respectively. Their performance degradation effects are analyzed by using current-voltage characteristics, spectral response measurements, and electron irradiation-induced displacements. The degradation rates of the maximum power and the spectral response of the solar cells increase with the electron fluence, and also increase with the increasing electron energy. It is observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.

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Key concepts: Fluence, Irradiation, Triple junction, Materials science, Electron, Electron beam processing, Optoelectronics, Solar cell