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1986•Japanese Journal of Applied PhysicsOpen access

Selective Embedded Growth of AlxGa1-xAs by Low-Pressure Organometallic Vapor Phase Epitaxy

Koichi Kamon, Shigenori Takagishi, Hideki Mori

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Abstract

Selective embedded growth of Al x Ga1-x As (x≤0.35) in grooves of patterned substrates has been achieved for the first time by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Epitaxial Al x Ga1-x As layers are embedded only in chemically etched grooves, while no polycrystalline deposition occurs on the masked area. The layers grown in grooves with the reverse-mesa cross sections, formed in the [110] direction, are uniform in thickness and show flat-smooth surfaces throughout. These results indicate that LP-OMVPE is a very promising technique for monolithic device integration.

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What this paper is about

Selective embedded growth of Al x Ga1-x As (x≤0.35) in grooves of patterned substrates has been achieved for the first time by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Epitaxial Al x Ga1-x As layers are embedded only in chemically etched grooves, while no polycrystalline deposition occurs on the masked area. The layers grown in grooves with the reverse-mesa cross sections, formed in the [110] direction, are uniform in thickness and show flat-smooth surfaces throughout. These results indicate that LP-OMVPE is a very promising technique for monolithic device integration.

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Available abstract

Selective embedded growth of Al x Ga1-x As (x≤0.35) in grooves of patterned substrates has been achieved for the first time by low-pressure organometallic vapor phase epitaxy (LP-OMVPE). Epitaxial Al x Ga1-x As layers are embedded only in chemically etched grooves, while no polycrystalline deposition occurs on the masked area. The layers grown in grooves with the reverse-mesa cross sections, formed in the [110] direction, are uniform in thickness and show flat-smooth surfaces throughout. These results indicate that LP-OMVPE is a very promising technique for monolithic device integration.

Key concepts: Epitaxy, Vapor phase, Crystallite, Chemical vapor deposition, Materials science, Group 2 organometallic chemistry, Phase (matter), Deposition (geology)

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