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1990•Acta Physica SinicaOpen access

EDGE DISLOCATION IN CRYSTAL DEFECT GAUGE FIELD

GAO FEI, 兰州大学材料科学系,兰州730000

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Abstract

In this paper, the strain and stress field produced by an edge dislocation are expressed by means of continuous dislocation distribution. The stresses inside and outside the core of the edge dislocation are obtained. The dislocation distribution of infinitesimal strength is expressed by crystal defect gauge field, which are calculated under certain gauge condition. In side the core, the stresses are finite when r goes to zero. The singularity of stresses is removed. Finally, the energy of the edge dislocation are calculated.

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What this paper is about

In this paper, the strain and stress field produced by an edge dislocation are expressed by means of continuous dislocation distribution. The stresses inside and outside the core of the edge dislocation are obtained. The dislocation distribution of infinitesimal strength is expressed by crystal defect gauge field, which are calculated under certain gauge condition. In side the core, the stresses are finite when r goes to zero. The singularity of stresses is removed. Finally, the energy of the edge dislocation are calculated.

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Available abstract

In this paper, the strain and stress field produced by an edge dislocation are expressed by means of continuous dislocation distribution. The stresses inside and outside the core of the edge dislocation are obtained. The dislocation distribution of infinitesimal strength is expressed by crystal defect gauge field, which are calculated under certain gauge condition. In side the core, the stresses are finite when r goes to zero. The singularity of stresses is removed. Finally, the energy of the edge dislocation are calculated.

Key concepts: Dislocation, Peierls stress, Enhanced Data Rates for GSM Evolution, Materials science, Stress field, Core (optical fiber), Singularity, Condensed matter physics

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