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2010•한국진공학회 학술발표회초록집Requires access

non-polar a-plane GaN growth on r-plane sapphire substrate by MOCVD

Ji-Su Son, Kwang‐Hyun Baek, Ji Hoon Kim, Hooyoung Song, Tae-Geun Kim, Sungmin Hwang

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Key concepts: Metalorganic vapour phase epitaxy, Sapphire, Plane (geometry), Polar, Materials science, Substrate (aquarium), Optoelectronics, Epitaxy

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non-polar a-plane GaN growth on r-plane sapphire substrate by MOCVD — Research Paper | ScholarLens