2015•IntegrationRequires access

Variability-aware 7T SRAM circuit with low leakage high data stability SLEEP mode

Hailong Jiao, Yongmin Qiu, Volkan Kursun

Open publisher page 13 citations

Abstract

This record does not include an abstract. Use the full-text link above if available.

About this research paper

What this paper is about

An abstract is not available in the OpenAlex record for this paper.

Why it matters

OpenAlex reports 13 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Key concepts: Static random-access memory, Transistor, Sleep mode, CMOS, Leakage (economics), Electronic engineering, Electronic circuit, Random access memory

Back to paper search Browse research topics Original source

Variability-aware 7T SRAM circuit with low leakage high data stability SLEEP mode — Research Paper | ScholarLens