Low-power, wide supply voltage bandgap reference circuit in 28nm CMOS
Filippo Neri, T. Brauner, Eric De Mey, Christian Schippel
Abstract
Filippo Neri, T. Brauner, Eric De Mey, Christian Schippel
Abstract
This paper presents an integrated bandgap reference circuit which is addressing low current consumption and a wide supply voltage range, using a current mode structure. Embedded in a sophisticated Power Management Unit (PMU) for a GNSS receiver, this bandgap reference has an output of 0.60 V and it can reach a temperature coefficient of 33 ppm/°C in the range from -40 °C to 125 °C. With a 1.4 V supply voltage, the power is only 3.5 μW and the PSRR is 57 dB at DC frequency. Occupying 0.125 mm2 chip area, this bandgap reference has been implemented in the CMOS 28 nm technology from Globalfoundries and successfully validated in the lab.
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This paper presents an integrated bandgap reference circuit which is addressing low current consumption and a wide supply voltage range, using a current mode structure. Embedded in a sophisticated Power Management Unit (PMU) for a GNSS receiver, this bandgap reference has an output of 0.60 V and it can reach a temperature coefficient of 33 ppm/°C in the range from -40 °C to 125 °C. With a 1.4 V supply voltage, the power is only 3.5 μW and the PSRR is 57 dB at DC frequency. Occupying 0.125 mm2 chip area, this bandgap reference has been implemented in the CMOS 28 nm technology from Globalfoundries and successfully validated in the lab.
Key concepts: Bandgap voltage reference, Power supply rejection ratio, CMOS, Voltage reference, Silicon bandgap temperature sensor, Voltage, Electrical engineering, Materials science