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MEASUREMENT OF THE RECOMBINATION RATE OF EXCESS CHARGE CARRIERS IN GERMANIUM BY MODULATION OF THE IMPURITY PHOTOCONDUCTIVITY

K. D. Glinchuk, N. M. Litovchenko, E.G. Miselyuk

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Abstract

The method for measuring the recombination rate by modulation of the impurity photoconductivity is described. It is shown that this method can be used for the determination, at different temperatures, of the cross sections for capture of majority carriers by impurities with deep levels. (auth)

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What this paper is about

The method for measuring the recombination rate by modulation of the impurity photoconductivity is described. It is shown that this method can be used for the determination, at different temperatures, of the cross sections for capture of majority carriers by impurities with deep levels. (auth)

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Available abstract

The method for measuring the recombination rate by modulation of the impurity photoconductivity is described. It is shown that this method can be used for the determination, at different temperatures, of the cross sections for capture of majority carriers by impurities with deep levels. (auth)

Key concepts: Photoconductivity, Impurity, Recombination, Germanium, Charge carrier, Recombination rate, Materials science, Modulation (music)

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