MEASUREMENT OF THE RECOMBINATION RATE OF EXCESS CHARGE CARRIERS IN GERMANIUM BY MODULATION OF THE IMPURITY PHOTOCONDUCTIVITY
K. D. Glinchuk, N. M. Litovchenko, E.G. Miselyuk
Abstract
K. D. Glinchuk, N. M. Litovchenko, E.G. Miselyuk
Abstract
The method for measuring the recombination rate by modulation of the impurity photoconductivity is described. It is shown that this method can be used for the determination, at different temperatures, of the cross sections for capture of majority carriers by impurities with deep levels. (auth)
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The method for measuring the recombination rate by modulation of the impurity photoconductivity is described. It is shown that this method can be used for the determination, at different temperatures, of the cross sections for capture of majority carriers by impurities with deep levels. (auth)
Key concepts: Photoconductivity, Impurity, Recombination, Germanium, Charge carrier, Recombination rate, Materials science, Modulation (music)