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INFLUENCE OF ANNEALING TEMPERATURE ON THE PROPERTIES OF ITO FILMS PREPARED BY ELECTRON BEAM EVAPORATION AND ION-ASSISTED DEPOSITION

Artorn Pokaipisit, Mati Horprathum, Pichet Limsuwan

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Abstract

Indium tin oxide (ITO) films were deposited on glass substrates by electron beam evaporation and ion-assisted deposition. Evaporation material source was 90 wt% In2O3 and 10 wt% SnO2 (purity of 99.99%). The ITO films were annealed in the air at 200, 250, 300 and 350 °C for 1 h. The structures, electrical and optical properties of ITO films were investigated. The deposited films were analyzed by X-ray diffractometer, four-point probe method and UV-NIR spectrophotometer. It was found that the lowest resistivity (2.25 · 10 -4 Ω-cm) and highest optical transmittance (83%) of ITO films were obtained at the annealing temperature of 300 °C. The grain size increased from 36.69 to 46.73 nm with increasing

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What this paper is about

Indium tin oxide (ITO) films were deposited on glass substrates by electron beam evaporation and ion-assisted deposition. Evaporation material source was 90 wt% In2O3 and 10 wt% SnO2 (purity of 99.99%). The ITO films were annealed in the air at 200, 250, 300 and 350 °C for 1 h. The structures, electrical and optical properties of ITO films were investigated. The deposited films were analyzed by X-ray diffractometer, four-point probe method and UV-NIR spectrophotometer. It was found that the lowest resistivity (2.25 · 10 -4 Ω-cm) and highest optical transmittance (83%) of ITO films were obtained at the annealing temperature of 300 °C. The grain size increased from 36.69 to 46.73 nm with increasing

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Available abstract

Indium tin oxide (ITO) films were deposited on glass substrates by electron beam evaporation and ion-assisted deposition. Evaporation material source was 90 wt% In2O3 and 10 wt% SnO2 (purity of 99.99%). The ITO films were annealed in the air at 200, 250, 300 and 350 °C for 1 h. The structures, electrical and optical properties of ITO films were investigated. The deposited films were analyzed by X-ray diffractometer, four-point probe method and UV-NIR spectrophotometer. It was found that the lowest resistivity (2.25 · 10 -4 Ω-cm) and highest optical transmittance (83%) of ITO films were obtained at the annealing temperature of 300 °C. The grain size increased from 36.69 to 46.73 nm with increasing

Key concepts: Materials science, Diffractometer, Indium tin oxide, Electron beam physical vapor deposition, Annealing (glass), Analytical Chemistry (journal), Electrical resistivity and conductivity, Evaporation

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INFLUENCE OF ANNEALING TEMPERATURE ON THE PROPERTIES OF ITO FILMS PREPARED BY ELECTRON BEAM EVAPORATION AND ION-ASSISTED DEPOSITION — Research Paper | ScholarLens