Nonlinearity measurement and analysis of 0.25 µm GaN HEMT over frequency and temperature using two-tone intermodulation distortion

Linear and nonlinear characteristics of 0.25 µm AlGaN/GaN HEMT grown on SiC substrate have been studied as a function of biasing, input power, frequency and temperature using a two-tone intermodulation distortion measurement technique for the first time. The results indicate a significant modification on the output IMD power. An empirical analytical model has been developed and good agreement was shown between the measured data with the simulation results. The analysis of GaN HEMT presented can be utilized for performance enhancement of the design optimization of advanced GaN based MMIC's operating at high temperature.