A 90 nm Static Random Access Memory in Submicron Technology

Static Random Access Memories (SRAM) and dynamic RAM (DRAM) have been the most popular technologies used to implement memory cells in computer systems. SRAM cells typically implemented with six transistors (6T cells) have been usually designed for speed, while DRAM cells, implemented with only one capacitor and the corresponding pass transistor (1T-1C cells) have been generally designed for density. Because of this reason, the former technology has been used to implement cache memories and the latter for main memory storage. Index Terms— SRAM, 6T, Non-volatile, leakage, power dissipation, speed, etc.