2004Unpublished venueRequires access

Analysis of ACPR performance for memoryless predistorter considering power amplifier memory effects

Hyunchul Ku, J.S. Kenney

Open publisher page 9 citations

Abstract

Memory effects in a power amplifier (PA) limit the improvement of performance for predistortion linearizers based on memoryless look-up table (LUT) or model-based architectures. This paper investigates degradation of the adjacent channel power ratio (ACPR) improvement for a PA with memoryless predistortion linearizer with respect to the memory effects. Using the input and output complex envelope signals of PA, the ACPR degradation due to memory effects is analytically extracted. A 170 W PEP LDMOS PA is measured and its ACPR performance degradation due to memory effects is analyzed using a memoryless predistortion linearizer.

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What this paper is about

Memory effects in a power amplifier (PA) limit the improvement of performance for predistortion linearizers based on memoryless look-up table (LUT) or model-based architectures. This paper investigates degradation of the adjacent channel power ratio (ACPR) improvement for a PA with memoryless predistortion linearizer with respect to the memory effects. Using the input and output complex envelope signals of PA, the ACPR degradation due to memory effects is analytically extracted. A 170 W PEP LDMOS PA is measured and its ACPR performance degradation due to memory effects is analyzed using a memoryless predistortion linearizer.

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OpenAlex reports 9 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Memory effects in a power amplifier (PA) limit the improvement of performance for predistortion linearizers based on memoryless look-up table (LUT) or model-based architectures. This paper investigates degradation of the adjacent channel power ratio (ACPR) improvement for a PA with memoryless predistortion linearizer with respect to the memory effects. Using the input and output complex envelope signals of PA, the ACPR degradation due to memory effects is analytically extracted. A 170 W PEP LDMOS PA is measured and its ACPR performance degradation due to memory effects is analyzed using a memoryless predistortion linearizer.

Key concepts: Predistortion, Linearizer, Adjacent channel power ratio, Amplifier, Lookup table, Electronic engineering, Power (physics), Computer science

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