A Muffin‐Tin Impurity Model and Its Application to 3d Transition Metal Impurities in Aluminium

Abstract A muffin‐tin impurity model for the scattering properties of substitutional impurities is applied to 3d transition metal impurities in Al. The relative potential between impurity muffin‐tin and host muffin‐tins is chosen in such a way that a sum rule for the scattering phase shifts is fulfilled to obtain selfconsistent screening of the impurity charge. Calculations of the change in the electronic density of states and residua, l resistivity are presented, which show a characteristic behaviour due to the fact that a virtual bound state is crossing the Fermi level of the host.