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2006•Unpublished venueRequires access

Growth and Characterization of InAs/GaAs Quantum Dots and Diode Lasers

Kallista Sears, Hark Hoe Tan, Manuela Buda, Jenny Wong-Leung, C. Jagadish

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Abstract

This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.

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What this paper is about

This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.

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Available abstract

This paper discusses the self-assembled growth of InAs/GaAs quantum dots by metal organic chemical vapor deposition and the lasing characteristics of diode lasers incorporating either 3 or 5 stacked quantum dot layers. Lasing occurred from the quantum dot excited state when 3-stacked layers were used. However by incorporating 5 stacked layers of quantum dots into a device, the increased gain volume enabled lasing from the ground state for cavity lengths as short as 1.5 mm.

Key concepts: Lasing threshold, Quantum dot, Optoelectronics, Quantum dot laser, Materials science, Chemical vapor deposition, Laser, Diode

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