SG-TFS: A versatile embedded flash with silicon nanocrystals as the storage medium
Ko‐Min Chang
Abstract
Ko‐Min Chang
Abstract
Since Tiwari introduced the nanocrystal memory concept in 1996, much progress has been made in the areas of nanocrystal deposition, storage stack engineering, process integration, cell design, and array architecture. This paper describes the highly versatile flash technology, SG-TFS, in terms of its applicability from low-end to high-end, from code storage to data storage, and from consumer to automotive market segments. SG-TFS stands for split-gate thin film storage and is built with silicon nanocrystals as its storage medium. Superior performance and reliability are demonstrated with a 90 nm 16 Mbit memory array.
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Since Tiwari introduced the nanocrystal memory concept in 1996, much progress has been made in the areas of nanocrystal deposition, storage stack engineering, process integration, cell design, and array architecture. This paper describes the highly versatile flash technology, SG-TFS, in terms of its applicability from low-end to high-end, from code storage to data storage, and from consumer to automotive market segments. SG-TFS stands for split-gate thin film storage and is built with silicon nanocrystals as its storage medium. Superior performance and reliability are demonstrated with a 90 nm 16 Mbit memory array.
Key concepts: Flash memory, Nanocrystal, Computer data storage, Materials science, Stack (abstract data type), Flash (photography), Non-volatile memory, Reliability (semiconductor)