2010•Electrochemical and Solid-State LettersOpen access

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

G. Dingemans, M. C. M. van de Sanden, W. M. M. Kessels

Abstract

The material properties and c-Si surface passivation have been investigated for films deposited using thermal and plasma atomic layer deposition (ALD) and plasma-enhanced chemical vapor deposition (PECVD) for temperatures between 25 and . Optimal surface passivation by ALD was achieved at with for p-type c-Si. PECVD provided a comparable high level of passivation for and contained a high fixed negative charge density of . Outstanding surface passivation performance was therefore obtained for thermal ALD, plasma ALD, and PECVD for a relatively wide range of material properties.

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Key concepts: Passivation, Plasma-enhanced chemical vapor deposition, Materials science, Atomic layer deposition, Deposition (geology), Plasma, Chemical vapor deposition, Layer (electronics)