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Passivation of Aluminum by Chromate Solutions

M. Heine, Michael J. Pryor

Open publisher page 46 citations

Abstract

Passive films of γ ‐ Al 2 O 3 formed on aluminum by chromate solutions exhibit lower ionic resistance and higher electronic resistance than amorphous thermal films of the same thickness. The low ionic resistance is attributed to the formation of some crystalline γ ‐ Al 2 O 3 of very low ionic resistance at the oxide solution interface. The high electronic resistance is attributed to the inclusion of some protons in the passive film. A detailed mechanism for the passivation process is advanced.

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What this paper is about

Passive films of γ ‐ Al 2 O 3 formed on aluminum by chromate solutions exhibit lower ionic resistance and higher electronic resistance than amorphous thermal films of the same thickness. The low ionic resistance is attributed to the formation of some crystalline γ ‐ Al 2 O 3 of very low ionic resistance at the oxide solution interface. The high electronic resistance is attributed to the inclusion of some protons in the passive film. A detailed mechanism for the passivation process is advanced.

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Available abstract

Passive films of γ ‐ Al 2 O 3 formed on aluminum by chromate solutions exhibit lower ionic resistance and higher electronic resistance than amorphous thermal films of the same thickness. The low ionic resistance is attributed to the formation of some crystalline γ ‐ Al 2 O 3 of very low ionic resistance at the oxide solution interface. The high electronic resistance is attributed to the inclusion of some protons in the passive film. A detailed mechanism for the passivation process is advanced.

Key concepts: Passivation, Ionic bonding, Chromate conversion coating, Materials science, Amorphous solid, Aluminium, Oxide, Chemical engineering

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