Arthur Uhlir
Abstract
Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.
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Properties of electrolyte-semiconductor barriers are described, with emphasis on germanium. The use of these barriers in localizing electrolytic etching is discussed. Other localization techniques are mentioned. Electrolytes for etching germanium and silicon are given.
Key concepts: Germanium, Electrolyte, Silicon, Etching (microfabrication), Materials science, Semiconductor, Optoelectronics, Engineering physics