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A 6 nsec CMOS EPLD with μW standby power

M.J. Allen

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Abstract

A description is presented of a 28-pin CMOS EPROM (erasable programmable read-only memory)-based programmable logic device optimized for memory-address-decoding applications. A novel architecture provides high-speed operation at CMOS power levels. Reprogrammability and 100% testability of EPROM technology are added benefits. Active power is less than 25% of slower bipolar solutions, and die area is 74 mil2

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What this paper is about

A description is presented of a 28-pin CMOS EPROM (erasable programmable read-only memory)-based programmable logic device optimized for memory-address-decoding applications. A novel architecture provides high-speed operation at CMOS power levels. Reprogrammability and 100% testability of EPROM technology are added benefits. Active power is less than 25% of slower bipolar solutions, and die area is 74 mil2

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Available abstract

A description is presented of a 28-pin CMOS EPROM (erasable programmable read-only memory)-based programmable logic device optimized for memory-address-decoding applications. A novel architecture provides high-speed operation at CMOS power levels. Reprogrammability and 100% testability of EPROM technology are added benefits. Active power is less than 25% of slower bipolar solutions, and die area is 74 mil2

Key concepts: EPROM, CMOS, Standby power, Testability, Programmable logic device, Decoding methods, Electrical engineering, Computer science

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