Avid Kamgar, H. Vaidya, F.H. Baumann
Abstract
We have studied time dependent dielectric breakdown (TDDB) of very thin gate oxides, down to 1.5 nm, and have found unusual dependence on certain processing parameters. In particular, we have found substantial reliability degradation by using S/D RTA temperatures above 1000/spl deg/C.
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We have studied time dependent dielectric breakdown (TDDB) of very thin gate oxides, down to 1.5 nm, and have found unusual dependence on certain processing parameters. In particular, we have found substantial reliability degradation by using S/D RTA temperatures above 1000/spl deg/C.
Key concepts: Time-dependent gate oxide breakdown, Dielectric strength, Materials science, Dielectric, Gate oxide, Gate dielectric, Electric breakdown, Reliability (semiconductor)