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2004•Unpublished venueRequires access

A double channel normally-off SiC JFET device with ultra-low on-state resistance

Udrea, Mihaila, Rashid, Amaratunga, Takeuchi, Kataoka, Malhan

Open publisher page 3 citations

Abstract

In this paper we report a novel 'all-epitaxial' 1.2 kV normally-off JFET featuring a double channel to improve considerably the specific on-state resistance. The device relies on a succession of n and p/sup +/ stripes in the channel/gate region. A 30% reduction in the on-resistance is obtained when compared to a standard single channel normally-off JFET. Depending on the structure considered, the unipolar value of the specific on-state resistance for a 1.2 kV device is below 3 m/spl Omega/cm/sup 2/.

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What this paper is about

In this paper we report a novel 'all-epitaxial' 1.2 kV normally-off JFET featuring a double channel to improve considerably the specific on-state resistance. The device relies on a succession of n and p/sup +/ stripes in the channel/gate region. A 30% reduction in the on-resistance is obtained when compared to a standard single channel normally-off JFET. Depending on the structure considered, the unipolar value of the specific on-state resistance for a 1.2 kV device is below 3 m/spl Omega/cm/sup 2/.

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Available abstract

In this paper we report a novel 'all-epitaxial' 1.2 kV normally-off JFET featuring a double channel to improve considerably the specific on-state resistance. The device relies on a succession of n and p/sup +/ stripes in the channel/gate region. A 30% reduction in the on-resistance is obtained when compared to a standard single channel normally-off JFET. Depending on the structure considered, the unipolar value of the specific on-state resistance for a 1.2 kV device is below 3 m/spl Omega/cm/sup 2/.

Key concepts: JFET, Optoelectronics, Materials science, Channel (broadcasting), Omega, Electrical engineering, Physics, Field-effect transistor

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