2009Unpublished venueOpen access

Comparison of ultra-low-power and static CMOS full adders in 0.15 µm FD SOI CMOS

Dina Kamel, David Bol, François‐Xavier Standaert, Denis Flandre

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Abstract

Ultra-low-power and static CMOS full adders are implemented in a 0.15 mum FD SOI CMOS technology with 1.5 V supply. The power consumption of ultra-low-power full adder is shown to be half that of static CMOS. These results are confirmed by both measurements and SPICE simulations in different corners of operation.

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What this paper is about

Ultra-low-power and static CMOS full adders are implemented in a 0.15 mum FD SOI CMOS technology with 1.5 V supply. The power consumption of ultra-low-power full adder is shown to be half that of static CMOS. These results are confirmed by both measurements and SPICE simulations in different corners of operation.

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Available abstract

Ultra-low-power and static CMOS full adders are implemented in a 0.15 mum FD SOI CMOS technology with 1.5 V supply. The power consumption of ultra-low-power full adder is shown to be half that of static CMOS. These results are confirmed by both measurements and SPICE simulations in different corners of operation.

Key concepts: CMOS, Adder, Spice, Silicon on insulator, Ultra low power, Low-power electronics, Power (physics), Electrical engineering

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