Comparison of ultra-low-power and static CMOS full adders in 0.15 µm FD SOI CMOS
Dina Kamel, David Bol, François‐Xavier Standaert, Denis Flandre
Abstract
Dina Kamel, David Bol, François‐Xavier Standaert, Denis Flandre
Abstract
Ultra-low-power and static CMOS full adders are implemented in a 0.15 mum FD SOI CMOS technology with 1.5 V supply. The power consumption of ultra-low-power full adder is shown to be half that of static CMOS. These results are confirmed by both measurements and SPICE simulations in different corners of operation.
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Ultra-low-power and static CMOS full adders are implemented in a 0.15 mum FD SOI CMOS technology with 1.5 V supply. The power consumption of ultra-low-power full adder is shown to be half that of static CMOS. These results are confirmed by both measurements and SPICE simulations in different corners of operation.
Key concepts: CMOS, Adder, Spice, Silicon on insulator, Ultra low power, Low-power electronics, Power (physics), Electrical engineering