1993IEEE Transactions on Computer-Aided Design of Integrated Circuits and SystemsRequires access

Algorithms for transient three-dimensional mixed-level circuit and device simulation

Kartikeya Mayaram, J.-H. Chern, Ping Yang

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Abstract

Algorithms for transient mixed-level circuit and device simulation using a full two-carrier three-dimensional (3-D) device simulator SIERRA and the circuit simulator SPICE3 are presented. Circuit and device simulator coupling algorithms that are suited for two-dimensional mixed-level circuit and device simulation using direct solvers cannot be successfully employed when iterative solution techniques are used in 3-D device simulation. New algorithms to couple the circuit and 3-D device simulator have been developed and evaluated. The importance of 3-D mixed-level circuit and device simulation is demonstrated by applying it to single-event upset in CMOS SRAM cells.>

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Algorithms for transient mixed-level circuit and device simulation using a full two-carrier three-dimensional (3-D) device simulator SIERRA and the circuit simulator SPICE3 are presented. Circuit and device simulator coupling algorithms that are suited for two-dimensional mixed-level circuit and device simulation using direct solvers cannot be successfully employed when iterative solution techniques are used in 3-D device simulation. New algorithms to couple the circuit and 3-D device simulator have been developed and evaluated. The importance of 3-D mixed-level circuit and device simulation is demonstrated by applying it to single-event upset in CMOS SRAM cells.>

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Available abstract

Algorithms for transient mixed-level circuit and device simulation using a full two-carrier three-dimensional (3-D) device simulator SIERRA and the circuit simulator SPICE3 are presented. Circuit and device simulator coupling algorithms that are suited for two-dimensional mixed-level circuit and device simulation using direct solvers cannot be successfully employed when iterative solution techniques are used in 3-D device simulation. New algorithms to couple the circuit and 3-D device simulator have been developed and evaluated. The importance of 3-D mixed-level circuit and device simulation is demonstrated by applying it to single-event upset in CMOS SRAM cells.>

Key concepts: Electronic circuit simulation, Transient (computer programming), Computer science, CMOS, Circuit design, Static random-access memory, Electronic circuit, Simulation

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