1992•Applied Surface ScienceRequires access

The effect of germanium bilayers on the band offsets at the InAsGaAs interface

T.-H. Shen, C. C. Matthai

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Key concepts: Band offset, Germanium, Heterojunction, Condensed matter physics, Classification of discontinuities, Materials science, Semiconductor, Pseudopotential

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The effect of germanium bilayers on the band offsets at the InAsGaAs interface — Research Paper | ScholarLens