Weidong Yang, Hao Lee, Peter C. Sercel
Abstract
The electronic structure of InAs/GaAs quantum dots grown by MBE is discussed in light of calculations based upon the experimentally determined shape and photoluminescence polarization spectroscopy.
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The electronic structure of InAs/GaAs quantum dots grown by MBE is discussed in light of calculations based upon the experimentally determined shape and photoluminescence polarization spectroscopy.
Key concepts: Quantum dot, Photoluminescence, Optoelectronics, Electronic structure, Materials science, Spectroscopy, Polarization (electrochemistry), Gallium arsenide