1987•Journal of Vacuum Science & Technology A Vacuum Surfaces and FilmsRequires access

Surface disorder induced Kikuchi features in reflection high-energy electron diffraction patterns of static and growing GaAs(001) films

P.K. Larsen, G. Meyer‐Ehmsen, B. Bölger, A. J. Hoeven

Abstract

Reflection high-energy electron diffraction (RHEED) investigations have been carried out on reconstructed GaAs(001)-2×4 surfaces under static conditions and during growth by molecular-beam epitaxy. Intensity modulation of streaks in the RHEED patterns is strongly enhanced during growth and high-intensity regions are found at angular positions corresponding to intersections of Kikuchi lines and streaks. The features are explained by a model assuming forward diffuse scattering in the surface layer due to long-range disorder followed by Kikuchi-type diffraction in the bulk.

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Key concepts: Reflection high-energy electron diffraction, Kikuchi line, Electron diffraction, Reflection (computer programming), Diffraction, Molecular beam epitaxy, Scattering, Materials science