2002•Unpublished venueRequires access

Validation of a new nonlinear HEMT model by intermodulation characterization

Guoli Qu, Anthony E. Parker

Abstract

A new HEMT model is presented. The second and third-order intermodulation products of HEMT amplifiers are investigated at low frequency (50 MHz) and high frequency (1 GHz) respectively. Simulations performed with SPICE agree well with measurements. The contribution of nonlinear capacitance to intermodulation distortion is investigated.

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Available abstract

Key concepts: Intermodulation, High-electron-mobility transistor, Spice, Capacitance, Amplifier, Nonlinear system, Electronic engineering, Nonlinear distortion