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2004•physica status solidi (b)Requires access

Ferromagnetic phase in II–VI semiconductors controlled by carriers

J. Cibert, H. Boukari, Matteo Bertolini, W. Pacuski, D. Ferrand, S. Tatarenko, P. Kossacki, J. A. Gaj

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Abstract

Abstract One main interest of carrier‐induced ferromagnetism in diluted magnetic semiconductors, is that it allows an active and sometimes reversible control of the magnetic properties, simply by manipulating the carrier density or carrier distribution using the usual techniques of semiconductor technology. We shall give two examples realised in (Cd,Mn)Te quantum wells: (i) control of the magnitude of the magnetisation by changing the carrier density; (ii) control of the magnetic anisotropy by changing the light‐hole/heavy‐hole splitting by strain and confinement in a quantum well. We will also shortly discuss the peculiarities of the II–VI quantum wells with respect to systems based on other diluted magnetic semiconductors. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Abstract One main interest of carrier‐induced ferromagnetism in diluted magnetic semiconductors, is that it allows an active and sometimes reversible control of the magnetic properties, simply by manipulating the carrier density or carrier distribution using the usual techniques of semiconductor technology. We shall give two examples realised in (Cd,Mn)Te quantum wells: (i) control of the magnitude of the magnetisation by changing the carrier density; (ii) control of the magnetic anisotropy by changing the light‐hole/heavy‐hole splitting by strain and confinement in a quantum well. We will also shortly discuss the peculiarities of the II–VI quantum wells with respect to systems based on other diluted magnetic semiconductors. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Available abstract

Abstract One main interest of carrier‐induced ferromagnetism in diluted magnetic semiconductors, is that it allows an active and sometimes reversible control of the magnetic properties, simply by manipulating the carrier density or carrier distribution using the usual techniques of semiconductor technology. We shall give two examples realised in (Cd,Mn)Te quantum wells: (i) control of the magnitude of the magnetisation by changing the carrier density; (ii) control of the magnetic anisotropy by changing the light‐hole/heavy‐hole splitting by strain and confinement in a quantum well. We will also shortly discuss the peculiarities of the II–VI quantum wells with respect to systems based on other diluted magnetic semiconductors. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Key concepts: Magnetic semiconductor, Condensed matter physics, Ferromagnetism, Charge-carrier density, Semiconductor, Magnetization, Quantum well, Phase (matter)

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