2003•Microelectronic EngineeringRequires access

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth

Zhang Zhicheng, Bingyan Ren, Chen Yonghai, Yang Shaoyan, Zhanguo Wang

Open publisher page 2 citations

Abstract

This record does not include an abstract. Use the full-text link above if available.

About this research paper

What this paper is about

An abstract is not available in the OpenAlex record for this paper.

Why it matters

OpenAlex reports 2 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Key concepts: Argon, Argon gas, Silicon, Oxygen, Flow (mathematics), Materials science, Crystal (programming language), Limiting oxygen concentration

Back to paper search Browse research topics Original source

Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth — Research Paper | ScholarLens