Chemical Etching of {hk0} Silicon Plates in EDP Part I: Experiments and Comparison with TMAH
C. R. Tellier, Thérèse Leblois, A.R. Charbonnieras
Abstract
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C. R. Tellier, Thérèse Leblois, A.R. Charbonnieras
Abstract
Open-access reader
This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence of the etchant on two dimensional and three dimensional etching shapes.
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This paper deals with the anisotropic chemical etching of various silicon plates etched in EDP. Changes with orientation in geometrical features of etched surface and in the etching shape of starting circular sections are systematically investigated. These etching shapes are compared with shapes produced by etching in KOH and TMAH solutions; This experimental study allows us to determine the dissolution slowness surface for the EDP solution and to investigate the real influence of the etchant on two dimensional and three dimensional etching shapes.
Key concepts: Etching (microfabrication), Isotropic etching, Silicon, Slowness, Dissolution, Materials science, Anisotropy, Surface (topology)