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2013•Unpublished venueRequires access

A 1.8ppm/°C Low Temperature Coefficient Curvature Compensated Bandgap for the Low Voltage Application

Chun Yang, Xiaole Cui, Bo Wang, Chung Len Lee

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Abstract

A new CMOS curvature compensated bandgap reference circuit which uses two different types of material to realize its resistors in an improved structure is presented. Implemented in a 0.18 μm technology, it achieves performance of a temperature coefficient of 1.8 ppm/°C over 0 ~ 100°C, a line regulation of 0.017%/V over the range 1.2 ~3 V and a power supply rejection ratio of 82 dB@1 Hz. It can offer a reference voltage of 1.1 V but occupy an area of only 0.049 mm2.

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What this paper is about

A new CMOS curvature compensated bandgap reference circuit which uses two different types of material to realize its resistors in an improved structure is presented. Implemented in a 0.18 μm technology, it achieves performance of a temperature coefficient of 1.8 ppm/°C over 0 ~ 100°C, a line regulation of 0.017%/V over the range 1.2 ~3 V and a power supply rejection ratio of 82 dB@1 Hz. It can offer a reference voltage of 1.1 V but occupy an area of only 0.049 mm2.

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Available abstract

A new CMOS curvature compensated bandgap reference circuit which uses two different types of material to realize its resistors in an improved structure is presented. Implemented in a 0.18 μm technology, it achieves performance of a temperature coefficient of 1.8 ppm/°C over 0 ~ 100°C, a line regulation of 0.017%/V over the range 1.2 ~3 V and a power supply rejection ratio of 82 dB@1 Hz. It can offer a reference voltage of 1.1 V but occupy an area of only 0.049 mm2.

Key concepts: Bandgap voltage reference, Temperature coefficient, Resistor, CMOS, Electrical engineering, Voltage, Power supply rejection ratio, Voltage reference

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