Effect of Creep Damage on the Tensile Creep Behavior of a Siliconized Silicon Carbide

The tensile creep behavior of a siliconized silicon carbide was investigated in air, under applied stresses of 103 to 172 MPa for the temperature range of 1100° to 1200°C. At 1100°C, the steady‐state stress exponent for creep was approximately 4 under applied stresses less than the threshold for creep damage (132 MPa). At applied stresses greater than the threshold stress for creep damage, the stress exponent increased to approximately 10. The activation energy for steady‐state creep at 103 MPa was approximately 175 kJ/mol for the temperature range of 1100° to 1200°C. Under applied stresses of 137 and 172 MPa, the activation energy for creep increased to 210 and 350 kJ/mol, respectively, for the same temperature range. Creep deformation in the siliconized silicon carbide below the threshold stress for creep damage was determined to be controlled by dislocation processes in the silicon phase. At applied stresses above the threshold stress for creep damage, creep damage enhanced the rate of deformation, resulting in an increased stress exponent and activation energy for creep. The contribution of creep damage to the deformation process was shown to increase the stress exponent from 4 to 10.