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2003•Unpublished venueRequires access

Intermodulation distortion behavior in LDMOS transistor amplifiers

Christian Fager, Nuno Borges Carvalho, José C. Pedro, Herbert Zirath

Open publisher page 10 citations

Abstract

An analysis of the intermodulation distortion (IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining the measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the IMD behavior also at higher frequency.

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What this paper is about

An analysis of the intermodulation distortion (IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining the measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the IMD behavior also at higher frequency.

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OpenAlex reports 10 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

An analysis of the intermodulation distortion (IMD) behavior of LDMOS transistor amplifiers is presented. It is shown that the turn-on region abruptness compared to most other devices is important for explaining the measured IMD behavior such as sweet-spots. The analysis is validated using two-tone measurements at low frequency for different classes of operation. A 1.9 GHz LDMOS power amplifier is designed and characterized to investigate the IMD behavior also at higher frequency.

Key concepts: Intermodulation, LDMOS, Amplifier, Transistor, Distortion (music), Transistor array, Nonlinear distortion, Materials science

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