Synergistic effects of neutron and gamma ray irradiation of a commercial CHMOS microcontroller
Xiaoming Jin, Ruyu Fan, Chen Wei, Lin Dongsheng, Shanchao Yang, Bai Xiao-Yan, Liu Yan, Guo Xiaoqiang, Guizhen Wang
Abstract
Xiaoming Jin, Ruyu Fan, Chen Wei, Lin Dongsheng, Shanchao Yang, Bai Xiao-Yan, Liu Yan, Guo Xiaoqiang, Guizhen Wang
Abstract
This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments: neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem.
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This paper presents the experimental results of a combined irradiation environment of neutron and gamma rays on 80C196KC20, which is a 16-bit high performance member of the MCS96 microcontroller family. The electrical and functional tests were made in three irradiation environments: neutron, gamma rays, combined irradiation of neutron and gamma rays. The experimental results show that the neutron irradiation can affect the total ionizing dose behaviour. Compared with the single radiation environment, the microcontroller exhibits considerably more severe degradation in neutron and gamma ray synergistic irradiation. This phenomenon may cause a significant hardness assurance problem.
Key concepts: Neutron irradiation, Neutron, Gamma ray, Irradiation, Materials science, Radiochemistry, Nuclear engineering, Nuclear physics