2015•Unpublished venueRequires access
Novel trench-etched double-diffused SiC MOS (TED MOS) for overcoming tradeoff between RonA and Qgd
Naoki Tega, Hiroyuki Yoshimoto, Digh Hisamoto, Naoki Watanabe, Haruka Shimizu, Shintaroh Sato, Yuki Mori, Takashi Ishigaki, M. Matsumura, Kumiko Konishi, Keisuke Kobayashi, Toshiyuki Mine, S Akiyama, Ryusei Fujita, Akio Shima, Yasuhiro Shimamoto
Open publisher page 13 citations
Abstract
To improve both conduction loss and switching loss, trench-etched double-diffused MOS (TED MOS) is proposed and fabricated. The trench side channels of TED MOS can provide both high channel mobility and wide channel width to decrease on-resistance (RonA). Moreover, TED MOS also achieves low gate-to-drain capacitance because its gates and trenches are completely covered with a P-body. Our results show that the figure of merit (RonA×Qgd) of TED MOS can be reduced by 70% compared to that of a conventional double-diffused MOS.