2013Unpublished venueRequires access

A −173 dBc/Hz @ 1 MHz offset Colpitts oscillator using AlN contour-mode MEMS resonator

Jabeom Koo, Augusto Tazzoli, Jeronimo Segovai-Fernandez, Gianluca Piazza, Brian Otis

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Abstract

A differential Colpitts oscillator using AlN MEMS CMR designed in 0.13 um CMOS is presented in this work. The oscillator operates at 1.16 GHz, with a total power consumption of 4.2 mW at 1 V supply. It achieves a phase noise of -143.6 dBc/Hz, -173.3 dBc/Hz at 100 kHz and 1 MHz offset frequency respectively with a figure of merit (FOM) of 228.3 dB. Current-based temperature compensation was employed to reduce oscillator drift across temperature.

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What this paper is about

A differential Colpitts oscillator using AlN MEMS CMR designed in 0.13 um CMOS is presented in this work. The oscillator operates at 1.16 GHz, with a total power consumption of 4.2 mW at 1 V supply. It achieves a phase noise of -143.6 dBc/Hz, -173.3 dBc/Hz at 100 kHz and 1 MHz offset frequency respectively with a figure of merit (FOM) of 228.3 dB. Current-based temperature compensation was employed to reduce oscillator drift across temperature.

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Available abstract

A differential Colpitts oscillator using AlN MEMS CMR designed in 0.13 um CMOS is presented in this work. The oscillator operates at 1.16 GHz, with a total power consumption of 4.2 mW at 1 V supply. It achieves a phase noise of -143.6 dBc/Hz, -173.3 dBc/Hz at 100 kHz and 1 MHz offset frequency respectively with a figure of merit (FOM) of 228.3 dB. Current-based temperature compensation was employed to reduce oscillator drift across temperature.

Key concepts: Colpitts oscillator, dBc, Phase noise, Resonator, Materials science, Figure of merit, CMOS, Voltage-controlled oscillator

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