1989•IEEE Journal of Solid-State CircuitsRequires access

Matching properties of MOS transistors

Marcel J. M. Pelgrom, Aad C.J. Duinmaijer, A.P.G. Welbers

Abstract

The matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured. Improvements to the existing theory are given, as well as extensions for long-distance matching and rotation of devices. Matching parameters of several processes are compared. The matching results have been verified by measurements and calculations on several basic circuits.>

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Key concepts: Matching (statistics), Transistor, Rotation (mathematics), Computer science, Electronic circuit, Substrate (aquarium), Integrated circuit, Electronic engineering