Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In 0.15 Ga 0.85 As quantum well

The lowest room-temperature threshold current density, 26 A/cm2, of any semiconductor diode lasers is reported for a quantum dot device with a single InAs dot layer contained within a strained In0.15Ga0.85As quantum well. The lasers are epitaxially grown on a GaAs substrate, and the emission wavelength is 1.25 µm.